Single Crystal Ingot pulling
The process of slowly rotating and pulling the dissolved polysilicon material to make a single crystal ingot.
Oxidation • diffusion
Film formation on the surface of silicon wafer.
The photoresist is uniformly coated on the surface of the wafer and its properties change when exposed to ultraviolet light.
The photoresist layer is exposed to ultraviolet light through a mask to form an electro pattern.
Remove any unwanted photoresist with a plasma etcher.
Ions are injected into the acidified film to form a semiconductor with desired properties. And, to multilayer, make an insulating film.
The silicon wafer is ground into a mirror shape.
Slice monocrystalline silicon ingot horizontally with diamond wire saw.
Identify key features of each processor, such as maximum power, power consumption, and heat generation.
The substrate, the core, and the heat sink are stacked together to form a processor. Finally, remove from the fixed plate.
Polish the wafer surface.
Electroplate a layer of copper sulfate to precipitate copper ions onto the transistor. After electroplating, a thin layer of copper is formed.
Each chip fabricated on the wafer is functionally tested with a defective portion.
Cut a wafer into pieces, each of which is a processor core.
Secure the processor with the fixed plate and weld the wire.
Print the product model.